Field-effect transistors form electrical junctions with excitable nerve cells from rat brain which are cultured on oxidized silicon. Action potentials in the neurons give rise to voltage transients on the gate with an amplitude < 100 µV as revealed by signal averaging. The shape of the extracellular records depends on a depletion and accumulation of voltage-gated sodium and potassium channels in the attached region of the cell membrane.
Fig. 3a: FET-record of action potentials. Injection current Iinj at the top, intracellular voltage VM in the middle and FET record VJ at the bottom (bandwidth 10 kHz). Averaged record VJ of 63 sweeps. Specific seal conductance gJ=600-700 mS/cm2.
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