A nerve cell is placed onto a combined silicon microstructure of an insulated spot of doped silicon and an insulated-gate field-effect transistor. Voltage pulses are applied to the insulated spot. They elicit neural activity which in turn modulates the transistor. The bidirectional interface between the ionics of neurons and the electronics of silicon is based on electrical induction mediated by an electrochemically safe interface.
Fig. 2: Two-way interface. (A) Retzius cell attached to three stimulation spots and a transistor which shine through the cell body. Scale bar 60 µm. (B) Scanning electron micrograph of the chip with three stimulation spots (ST) and one transistor (S source, D drain). Scale bar 15 µm. The dark area (ro) is recessed oxide which separates the active components. (The bright streak is due to the microscopic contrast of secondary p-doping [4].) (C) Surface profile across a stimulation spot, recessed oxide and gate (G).
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