Fluorescence Interference-Contrast Microscopy on
Oxidized Silicon using a Monomolecular Dye Layer
Armin Lambacher and Peter Fromherz
Applied Physics A 63 (1996) 207-216
Abstract
A silicon chip is covered by a monomolecular film of a fluorescence dye with
silicon dioxide used as a spacer. The fluorescence depends on the distance of
the dye from the silicon. The modulation of the intensity is described quantitatively
by an optical theory which accounts for interference of the exciting light and of
the emitted light. The effect is used to obtain a microscopic picture of the
surface profile with a precision of a few Angströms. The perspectives for an a
pplication in wet systems such as neuron-silicon junctions and lipid membranes
on silicon are pointed out.
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