Technology aspects of a CMOS Neuro-Sensor: Back End Process and Packaging
Franz Hofmann, Björn Eversmann, Martin Jenkner, Alexander Frey, Matthias Merz,
Tamara Birkenmaier, Peter Fromherz, Matthias Schreiter, Reinhard Gabl, Kurt Plehnert,
Michael Steinhauser, Gerald Eckstein, Roland Thewes
ESSDERC
Abstract
A CMOS-compatible process is presented which
allows to realize sensor arrays for non-invasive,
extracellular, high density, long term recording of neural
activity. A high-permittivity bio-compatible dielectric is
used to capacitivly couple nerve cell-induced biological
signals to the CMOS circuitry-based electronic world.
The transducer consists of a multi layer of TiO
2 and ZrO
2
and is fabricated in the backend of a 0.5 µm standard
CMOS technology. Living cells are cultured within a
specific package on top of the sensor chip. First
measurements reveal proper operation of the chip.
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